Date: Thursday 27 March 2014
Time: 11:00 - 12:30
Location / Room: Saal 1

Organisers:
Ian O'Connor, Lyon Institute of Nanotechnology, FR
Thomas Mikolajick, NamLab gGmbH, DE

Chair:
Tahoori Mehdi, Karlsruhe Institute of Technology, DE

Co-Chair:
Thomas Mikolajick, NamLab gGmbH, DE

Memory devices and technologies have undergone huge transformations in recent years and many industrially viable replacements to conventional technologies are on the brink of entering the market. The first paper in this session gives an overview of alternative memory technologies and how each can contribute or disrupt accepted memory hierarchies. The quest for a universal memory device is still underway, and the other papers in this session focus on various approaches for future memory devices. The second paper examines phase change memories, while magnetic memories are discussed in the third paper, both in terms of standard memory applications but also in terms of how they can improve logic performance. Resistive memories are the topic of the fourth paper, where new applications are considered - in FPGAs, NoCs and crossbars. The fifth paper in this session looks at low-cost memory with a printable manufacturing approach, leading to other applications and market segments.

Time	Label	Presentation Title Authors
11:00	10.1.1	SEMICONDUCTOR MEMORY PERSPECTIVE Speaker: Roberto Bez, Micron, IT Abstract Memories are getting increasing importance since they are becoming fundamental in the definition of the electronic system. Presently the industry standard technologies are still DRAM and Flash that have been able to guarantee the cost sustainability thanks to the continuous scaling. The NAND/DRAM miniaturization is becoming increasingly difficult and moreover new applications are requiring higher memory density and better performances. Therefore there are good opportunities and important challenges for the alternative memory technologies to enter into the market and replace/displace the standard ones.
11:20	10.1.2	EXPLORING THE LIMITS OF PHASE CHANGE MEMORIES Speaker: Matthias Wuttig, RWTH Aachen University of Technology, DE Abstract Phase change materials are among the most promising compounds in information technology. They can be very rapidly switched between the amorphous and the crystalline state, indicative for peculiar crystallization behaviour. Phase change materials are already employed in rewriteable optical data storage, where the pronounced difference of optical properties between the amorphous and crystalline state is used. This unconventional class of materials is also the basis of a storage concept to replace flash memory. This talk will discuss the unique material properties which characterize phase change materials. In particular, it will be shown that the crystalline state of phase change materials is characterized by the occurrence of resonant bonding, a particular flavour of covalent bonding. This insight is employed to predict systematic property trends and to develop non-volatile memories with DRAM-like switching speeds potentially paving the road towards a universal memory. Phase change materials do not only provide exciting opportunities for applications including 'greener' storage devices, but also form a unique quantum state of matter as will be demonstrated by transport measurements. In this talk, potential limits of phase change memories in terms of switching speed, scalability and power consumption will be discussed.
11:35	10.1.3	MAGNETIC MEMORIES: FROM DRAM REPLACEMENT TO ULTRA LOW POWER LOGIC CHIPS Speaker: Jean-Pierre Nozières, Spintec, FR Abstract The recent advent of spin transfer torque (STT) has shed a new light on MRAM with the promises of much improved performances and greater scalability to very advanced technology nodes. As a result, MRAM is now viewed as a credible solution for stand-alone and embedded applications where the combination of non-volatility, speed and endurance is key. Whereas the technology is nearing maturity for DRAM replacement, with the exception of process scaling to sub-20nm which remains a challenge, circuit designers are now actively looking at SoCs where MRAM could bring in better performance and lower power consumption in data intensive applications as well as instant-on capability in mobile applications. In this paper we present a review of the MRAM technology and a methodology for ASIC design using a custom full digital hybrid CMOS/Magnetic Process Design Kit. We finish by a few examples showing that magnetic memories can be efficiently integrated in logic designs, for both safety and low power purposes.
11:55	10.1.4	RESISTIVE MEMORIES: WHICH APPLICATIONS? Speakers: Fabien Clermidy1, Natalija Jovanovic1, Santhosh Onkaraiah1, Houcine Oucheikh1, Ogun Turkyilmaz1, Olivier Thomas1, Elisa Vianello1, Jean-Michel Portal2 and Marc Bocquet2 1CEA-LETI, FR; 2Université d'Aix-Marseille, FR Abstract Recent announcement of 16Gbits Resistive memory from Sony shows the trend to quickly adopt resistive memories as an alternative to DRAM. However, using ReRAM for embedded computing is still a futuristic goal. This paper approaches two applications based on ReRAM-devices for gaining area, performance or power consumption. The first application is FPGA, one of the first architecture that can benefit the most from ReRAM integration to reduce footprint and save energy. The second application relates to ultra-low-power systems and the way to obtain an instantaneous "freeze" mode in devices for Internet of Things.
12:10	10.1.5	THINFILM PRINTED FERRO-ELECTRIC MEMORIES AND INTEGRATED PRODUCTS Speakers: Christer Karlsson and Peter Fischer, Thin Film Electronics AB, SE Abstract Printed electronics has recently moved from a focus on the production of individual components towards the design and initial commercialization of integrated systems. This paper describes the current status and further trends of ferroelectric nonvolatile memories as developed and produced by Thin Film Electronics.
12:30		End of session Lunch Break in Exhibition Area Sandwich lunch