Towards High‐Performance Polarity‐Controllable FETs with 2D Materials

Giovanni V. Resta1, Jorge Romero Gonzalez3, Yashwanth Balaji2, Tarun Agarwal2, Dennis Lin2, Francky Catthor2, Iuliana P. Radu2, Giovanni De Micheli1,a and Pierre‐Emmanuel Gaillardon3,b
1Integrated System Laboratory ‐ EPFL, Lausanne, Switzerland
agiovanni.resta@epfl.ch
2IMEC, Leuven, Belgium
3Laboratory of NanoIntegrated Systems ‐ University of Utah, Salt‐Lake City, USA
bpierre‐emmanuel.gaillardon@utah.edu

ABSTRACT


As scaling of conventional silicon‐based electronics is reaching its ultimate limit, two‐dimensional semiconducting materials of the transition‐metaldichalcogenides family, such as MoS2 and WSe2, are considered as viable candidates for next‐generation electronic devices. Fully relying on electrostatic doping, polarity‐controllable devices, that use additional gate terminals to modulate the Schottky barriers at source and drain, can strongly take advantages of 2D materials to achieve high on/off ratio and low leakage floor. Here, we provide an overview of the latest advances in 2D material processes and growth. Then, we report on the experimental demonstration of polarity‐controllable devices fabricated on 2D‐WSe2 and study the scaling trends of such devices using ballistic self‐consistent quantum simulations. Finally, we discuss the circuit‐level opportunities of such technology.



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