Technical Programme Committee 2018

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Topic: D14 Emerging Technologies for Future Memories

Modeling, circuit design, and design automation flows for future data storage systems, including non-CMOS memory (e.g., MRAM, STT-RAM, FeRAM, PCRAM, RRAM, OxRAM, quantum dots, etc.); memory-centric architectures (e.g., logic-in-memory, associative memories, non-volatile caches etc.); memory management techniques for emerging memories.

Chair: Jean-Michel Portal, Aix-Marseille University, FR, Contact

Co-Chair: Pierre-Emmanuel Gaillardon, University of Utah, US, Contact

Members:

  • Bastien Giraud, CEA LETI, FR, Contact
  • Arne Heittman, RWTH Aachen University, DE, Contact
  • Yu Hua, Huazhong University of Science and Technology, CN, Contact
  • Kyungsu Kang, Samsung, KR, Contact
  • Dhireesha Kudithipudi, Rochester Institute of Technology, US, Contact
  • Shahar Kvatinsky, Technion, IL, Contact
  • Luca Larcher, Universit√† di Modena e Reggio Emilia, IT, Contact
  • Pascal Meinerzhagen, Intel Circuit Research Lab, US, Contact
  • Tajana Rosing, UCSD, US, Contact
  • Stefan Slesazeck, NaMLab gGmbH, DE, Contact
  • Naveen Verma, Princeton University, US, Contact
  • Chengmo Yang, University of Delaware, US, Contact
  • Hao Yu, Nanyang Technological University, SG, Contact
  • Weisheng Zhao, Beihang University, CN, Contact